In this paper, we report on the “Laser Induced Transfer- LIT” method, as a digital and solvent-free approach for the single step integration of three 2D materials: Graphene, MoS2, and Bi2Se3-xSx. LIT offers digital control over the size (<10 μm resolution) and the shape of the printed of pixels. The quality and structural integrity of the transfers has been confirmed using Scanning Electron Microscopy, Atomic Force Microscopy and Raman spectroscopy. Moreover, Ab initio Molecular Dynamics Simulations have been employed to shed light on the key atomic-scale details of the Laser Transfer process.
The advent of functional devices based on two-dimensional (2D) materials has further intensified the interest in the latter. However, the fabrication of structures using layered materials remains a key challenge. Recently, we proposed the so-called “Laser-Induced Transfer” method (LIT), as a digital and solvent-free approach for the high-resolution and intact transfer of 2D materials’ pixels. Here, we will further highlight the versatility of LIT by reporting results on the high-quality digital transfer of graphene and MoS2. These materials have emerged in the field of nanoelectronics, sensors and photonics due to their unique optoelectronic properties, but their high-quality transfer remains a hurdle. The quality of the transferred films has been confirmed with systematic characterization based on Scanning Electron Microscopy and Raman spectroscopy, as well as mobility’s extraction. Then we will present how the laser induced transfer of these materials can be employed as a key-enabler for the demonstration of the digital deposition of graphene and MoS2 pixels with form factors and electronic properties suitable for FETs. The presented results highlight the potential of LIT for the wafer scale integration of 2D materials, therefore fostering the wider industrial incorporation of 2D materials in electronics, optoelectronics and photonics.
Ιn the current work we will present the transfer hBN, MoS2 and Bi2Se3-xSx by using the Laser Induced Transfer technique on rigid and flexible substrates. We will exhibit the advantages of the certain technique, the resolution of the transferred pixels and the characterization methods such as Scanning Electron Microscopy, Raman spectroscopy and Atomic Force Microscopy. Furthermore, we will refer to the possible applications concerning the Bi2Se3-xSx and the hBN. Finally, we will support the experimental results with the corresponding theoretical results of ab initio Molecular Dynamics (AIMD) with main purpose to explain the detachment and the attachment of the 2D materials from the donor to the receiver substrate.
KEYWORDS: Graphene, Modeling, Chemical vapor deposition, Scanning electron microscopy, Receivers, Raman spectroscopy, Atomic force microscopy, Copper, Nickel, Chemical species
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