Amorphous HgCdTe thin films were deposited on quartz substrate by RF magnetron sputtering technique. The
modulated photocurrent(MPC) of amorphous HgCdTe thin films has been investigated as a function of temperature T,
the excitation light intensity F, and applied electric fields EB. The results indicated that the modulated photocurrent show
an activated behavior in the range of 80K-300K. The activated energy ΔEap of the modulated photocurrent was found to
strongly depend on temperature, whereas it is nearly independent of the applied electric field. The exponent γ in the
power law relationship (Ip∝Fγ) between excitation light intensity F and modulated photocurrent of amorphous HgCdTe
thin films was obtained at different temperature. The γ depends strongly on the temperature T, but it is independence of
applied electric fields EB. The values of exponent γ of amorphous HgCdTe thin films lie between 0.5 and 1.0. The results
indicated a continuous distribution of localized states exists in amorphous HgCdTe thin films.
KEYWORDS: Mercury cadmium telluride, Amorphous semiconductors, Temperature metrology, Infrared detectors, Chalcogenides, Solar energy, Semiconductors, Infrared radiation, Crystals, Electron transport
The relationship between the dark conductivity (σd) and temperature (T) of amorphous HgCdTe films has been
investigated at 80-300 K. The measurement of σd as a function of T indicates the presence of four distinct regions: (I)
For 250K≤T<300 K(3.3<1000/T≤4.0), σd is strongly increase with T increasing, the transport mechanism is dominated
by extended state conduction, (II) for 180K≤T<250 K(4<1000/T≤5.6), σd is linearly increase with T increasing, hopping
conduction between localized band tail state dominates the transport mechanism, (III) for 120K≤T<180K
(5.6<1000/T≤8.3), σd is very small and weakly increase with T increasing, constant-range hopping conduction in
localized states near the Fermi energy significantly contributes to the transport properties, and (IV) 80K≤T<120K
(8.3<1000/T≤12.5), the dark conductivity of amorphous HgCdTe films is very small and weakly decreases with
temperature increasing, it would be possible that the conductivity type of amorphous HgCdTe films converted about
120K, i.e. from the n type converted to p type. The temperature behavior of σd of amorphous HgCdTe was described in
terms of the Mott-Davis model.
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