Dr. Lin Jiang Profile

Dr. Lin Jiang

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Proceedings Article | 10 April 2024 Poster + Paper

Automated TEM metrology and EDS characterization of plan view DRAM capacitors

Karthik Gnanasekaran, Michael Strauss, Jiashi Zhou, Lin Jiang, Xiaoting Gu, Zhenxin Zhong

Proceedings Volume 12955, 129553B (2024) https://doi.org/10.1117/12.3010955

KEYWORDS: Sensors, Capacitors, Transmission electron microscopy, Metrology, Electron beams, Aluminum, Distance measurement, X-rays, Solids, Photomicroscopy

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Capacitors play an essential role in dynamic random-access memory (DRAM) devices. With continuous DRAM device scaling, critical dimension measurements and elemental analysis of capacitor structures becomes more critical. Here, we present an automated TEM metrology and EDS characterization workflow for plan view DRAM capacitors. We utilized a Metrios 6 (Scanning) Transmission Electron Microscope ((S)TEM) equipped with an Ultra-X Energy Dispersive X-Ray Spectroscopy (EDS) detector to obtain high-quality analytical information of DRAM capacitors. The large solid angle of the Ultra-X detector provides approximately 3-4 times more x-ray counts than the previous generation Dual-X detector. Further, we show Ultra-X detector can characterize the elemental composition even on layers as thin as ~1 nm using low electron doses. Additionally, we demonstrate that the extended EDS acquisition induces elemental diffusion and structural alterations, leading to a ~4% reduction in the radius of certain DRAM layers. These findings underscore the importance of controlling the electron dose during imaging to ensure accurate, reliable, and reproducible CD measurements.

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