GeSn alloys have emerged as a promising material for realizing CMOS-compatible light sources. GeSn lasers demonstrated to date have large device footprints and active areas, which limit the realization of densely integrated lasers operating at low power consumption. Thanks to their intrinsically small device form factors, 1D photonic crystal lasers may offer opportunities to overcome such limitations of large GeSn lasers. Here, we present a 1D photonic crystal nanobeam laser with a very small device footprint (~7 μm2) and a compact active area (~1.2 μm2) on a GeSn-on-insulator substrate.
Combining Sn alloying and tensile strain to Ge has emerged as the most promising engineering approach to create an efficient Si-compatible lasing medium. The residual compressive strain in GeSn has thus far made the simple geometrical strain amplification technique unsuitable for achieving tensile strained GeSn. Herein, by utilizing two unique techniques, we report the introduction of a uniaxial tensile strain directly into GeSn micro/nanostructures. By converting GeSn from indirect to direct bandgap material via tensile strain, we achieve a 10-fold increase in the light emission intensity.
In this work, metal-semiconductor-metal photodetectors (MSM PDs) on a GeSn-on-insulator (GeSnOI) platform were demonstrated. This platform was realized by direct wafer bonding (DWB) and layer transfer methods using 9% Sn composition of GeSn film epitaxial-grown on Si. The compressive strain in the GeSn film was observed as ~0.23%, which indicates a significant reduction of the strain compared to the ~5.5% lattice mismatch at an interface of the Ge0.91Sn0.09/Si. GeSn MSM PDs demonstrated on a GeSnOI platform displayed a low dark current of 4nA at a 1V of bias voltage due to the insertion of a thin aluminum oxide (Al2O3) layer in an interface of metal/GeSn for an alleviation of Fermi-level pinning. The responsivity was 0.5 and 0.29 A/W at the wavelength of 1,600 and 2,033nm at 2V, respectively. This work paves the way for GeSnOI photonics as the next promising platform along with Si-on-insulator (SOI) and Ge-on-insulator (GOI) platforms for mid-infrared (MIR) communication and sensing applications.
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