This presentation deals with MSM photodetectors and post-detection amplifiers capable of responding at millimeter-wave frequencies. Monolithic integration, incorporating pseudomorphic MODFETs (SMODFETs) as the amplifiers, is used with coplanar waveguide resonant impedance transformers. Interdigitated Schottky barrier metal fingers, with submicron spacing and unique Bragg reflector layers to maximize light absorption, are used for the photodetector. For a 0.5-micron gap detector, a measurement shows a flat frequency response at least up to 40 GHz. Quantum efficiency is expected to be more than 60 percent for a 0.75 micron gap and 0.25 micron finger detector with 0.375 micron absorption layer.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.