We present an extensive experimental analysis of two-dimensional gallium-arsenide-based VCSEL arrays considering the impact on performance of the VCSEL density (inter-VCSEL spacing and mesa diameters), the number and arrangement of VCSEL elements, and the VCSEL vertical epitaxial design. We include computer simulations that explain well the behavior and trends we observe in our experiments. We present the most efficient modifications of the lateral and vertical VCSEL arrays designs to optimize heat dissipation, optical output power scaling, and wall plug efficiency.
This paper presents results of numerical simulations of a GaAs-based vertical-cavity surface-emitting laser, emitting at 980 nm. These simulations concern the influence of the number of top DBR pairs on the laser’s threshold parameters, as well as the optical loses in the cavity. Moreover, electrical parameters such as the device’s resistance and its capacitance-related temporal characteristics are analyzed as functions of the thickness of the top DBR. The simulations suggest that there is a possibility of a significant reduction in the number of pairs in the top DBR that can be beneficial in certain applications.
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