In recent years, standard CMOS microprocessors have approached their maximum power dissipation per unit area, effectively placing a limit on computational power. This highlights the urgent need to explore alternative technologies. One promising avenue is the use of superconductors, which demonstrate zero resistivity below a critical temperature. However, circuits based on superconductors necessitate the use of cryostats to maintain low temperatures, presenting challenges in data transfer with the room temperature environment. While coaxial cables are often employed for this purpose, they suffer from limited data transfer rates and contribute significantly to heat load. On the contrary, photonics integrated circuits (PICs) coupled with optical fibers present a viable solution. They enable scalable, cost-effective, and power-efficient optical interconnections capable of supporting high data transfer rates while minimizing heat transfer. In this presentation, We will discuss the latest advancements in cryogenic PICs, focusing on their application in interfacing with cryogenic computing systems such as single-flux-quantum logic circuits and superconducting qubits.
Photonic integrated circuits provide a scalable platform for photonics-based quantum technologies. However, integrating quantum emitters and electro-optic cavities within this platform remains an open challenge proving to be a major hurdle from implementing key functionalities for quantum photonics, such as single photon sources and nonlinearities. Here, we address this shortcoming with the hybrid integration of InAs/InP quantum dot emitters on foundry silicon photonics and the implementation of photonic crystal cavities in thin-film lithium niobate. Co-integrated on-chip electronics allow us to tune the emission properties of the quantum dots while enabling GHz-rate coherent modulation over photons trapped in the cavities, thus providing a new level of programmability over interactions between optical fields and atom-like systems in integrated circuits. Our results open the door to a new generation of quantum information processors that can be manufactured in leading semiconductor foundries.
Thin Film Lithium Niobate (TFLN) photonic integrated circuits offer several improvements over other platforms in terms of material loss, energy efficiency, and operational bandwidth. We review our recent demonstration of quadrature phase shift keying in an ultrasmall TFLN photonic crystal-based IQ modulator. Our modulator features a footprint of 40 × 200 μm2 along with quality factors approaching 105 providing it with a Vπ = 1.16 V [H. Larocque et al. CLEO 2023, paper STh1R.3; H. Larocque et al. arXiv:2312.16746]. We discuss an extension to and optimization of quadrature amplitude modulation encoding schemes tailored to the device’s voltage response, including the use of a deep neural network for streamlining bit error rate minimization.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.