An electrical equivalent circuit for quantum well absorptive bistable laser diode has been developed from rate equations. The carrier transport effects are studied by simulating the circuit for dc sweep and transient conditions using circuit simulator Pspice. The hysterisis width is found to vary nonlinearly for lower values of transport time and linearly for higher values. The turn on delay increases with transport time in transient operation.
Self pulsation in laser diodes results from the non uniform distribution of the carrier lifetime along the cavity, and can be used for short optical pulse generation. A large signal electrical equivalent circuit for an absorptive multi quantum well bistable laser diode has been developed from the rate equations. The dc and transient analysis are carried out using PSPICE circuit simulator. The dc simulation shows hysterisis characteristics. In transient analysis, the gain section is excited with an electrical pulse and the optical output exhibits self pulsation phenomenon in which short optical pulses of width 30 ps (FWHM) are generated.
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