An integrated VCSEL transmitter has been realized and designed in TSMC 0.18 μm CMOS process. The transmitter is compromised of a gain stage utilizing active feedback, active inductor, slew rate boosting techniques to achieve high gain, high bandwidth and an unbalanced degenerated driver stage to achieve data speed of 10Gb/s while ensuring the large peak to peak current into VCSEL. Simulated maximum bandwidth and power consumption of transmitter are 7.5 GHz and 40 mA, respectively.
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