Prof. Nikolai B. Zaletaev Profile

Prof. Nikolai B. Zaletaev

Principal Scientist at Orion Research-and-Production Association

SPIE Involvement:

Author

Proceedings Article | 8 September 2006 Paper

Low background photodetectors based on AIVBVI alloys

Vladimir Chishko, Nikolay Zaletaev

Proceedings Volume 6307, 63070T (2006) https://doi.org/10.1117/12.683924

KEYWORDS: Sensors, Lead, Photodiodes, Tin, Niobium, Resistance, Temperature metrology, Germanium, Tellurium, Photodetectors

Read Abstract +

Proceedings Article | 30 August 2006 Paper

Modeling and experimental study of diamond detector radiation response

Nikolay Zaletaev, Sergey Sivachenko

Proceedings Volume 6319, 63190T (2006) https://doi.org/10.1117/12.679988

KEYWORDS: Sensors, Diamond, Silicon, Crystals, Semiconductors, Diodes, Electrons, Surgery, Detector development, Ultraviolet radiation

Read Abstract +

Diamond has the highest radiation-damage level among radiation-detector semiconductor materials. Besides, low carbon nucleus charge, Z=6, provides tissue equivalence of diamond detectors. This made it possible to create unique diamondbased ionizing-radiation detectors possessing properties unachievable, for present time, for other materials. These detectors have found the applications in a number of areas including thermonuclear plasma diagnostics at world leading tokamaks and medical dosimetry. Perfection and new developments of diamond-based detectors, including those on natural and synthetic crystals as well as on CVD films, encounter a number of obstacles, the main of which is related to empirical approach to the development in consequence of the lack of detailed understanding in physical mechanisms of such detector operation. This paper is further development, theoretical and experimental, of our earlier proposed model of the operation of a radiation detector based on high-resistivity semiconductor which first made it possible to explain main experimentally observed peculiarities of characteristics of natural diamond detectors exposed to various kinds of radiation. The model is based on the charge carrier recombination process that ensures the variation of carrier lifetimes depending on the space charge value, in the whole detector volume. All calculations are conducted for two-level model of recombination which fits this requirement. It is shown that a weak generation of free charge carriers from impurity levels in addition to the main band-to-band generation can significantly increase the operation voltages of the detector. A decrease of detector temperature is shown to widen the circle of the materials on which the detectors operating in accordance with the model can be developed. Results of modeling of operation of the detector on detector samples based on silicon, as the most perfect technologically developed material, are presented. The experimental studies were performed at a temperature of 14 K to ensure sufficiently low concentration of trapping impurity centers in this material. A technique is proposed for evaluation of the concentration of trapping levels in high-resistivity semiconductors.

Proceedings Article | 17 April 2006 Paper

Modeling and experimental results of low-background extrinsic double-injection IR detector response

N. Zaletaev, A. Filachev, V. Ponomarenko, V. Stafeev

Proceedings Volume 6206, 620633 (2006) https://doi.org/10.1117/12.665231

KEYWORDS: Diodes, Sensors, Photoresistors, Photodiodes, Electrons, Infrared detectors, Semiconductors, Stereolithography, Diamond, Antimony

Read Abstract +

Proceedings Article | 17 September 2005 Paper

Study of radiation-response properties of type IIa diamond detectors

Nicolay Zaletaev

Proceedings Volume 5922, 59220S (2005) https://doi.org/10.1117/12.613120

KEYWORDS: Sensors, Diamond, Crystals, Particles, Ultraviolet radiation, Absorption, Detector development, Spectroscopy, Signal detection, Gamma radiation

Read Abstract +

Proceedings Article | 29 August 2005 Paper

New operation mode of low background extrinsic double-injection IR detectors

Nicolay Zaletaev, Anatoly Filachev, Vladimir Ponomarenko

Proceedings Volume 5883, 58830U (2005) https://doi.org/10.1117/12.615673

KEYWORDS: Diodes, Sensors, Photoresistors, Photodiodes, Electrons, Semiconductors, Infrared detectors, Ionization, Antimony, Detector arrays

Read Abstract +

Proceedings Article | 15 December 2000 Paper

Some features of gain and detectivity frequency dependencies of low-background extrinsic IR detectors

Nicolas Zaletaev

Proceedings Volume 4130, (2000) https://doi.org/10.1117/12.409837

KEYWORDS: Sensors, Diodes, Photoresistors, Photodiodes, Polonium, Signal processing, Electric field sensors, Infrared detectors, Diffusion, Temperature metrology

Read Abstract +

Proceedings Article | 21 November 2000 Paper

Comparative study of natural and synthetic type-IIa diamond radiation detectors

Nicolas Zaletaev, Andrey Alekseyev, Vladimir Amosov, Boris Feigelson

Proceedings Volume 4141, (2000) https://doi.org/10.1117/12.407599

KEYWORDS: Sensors, Diamond, Neodymium, Crystals, Ultraviolet radiation, Information operations, X-rays, Electric field sensors, Carbon, Semiconductors

Read Abstract +

Proceedings Article | 29 September 1995 Paper

Extrinsic semiconductor low-background infrared field-effect transistor of a new type

Nicolas Zaletaev, Vasily Kocherov

Proceedings Volume 2553, (1995) https://doi.org/10.1117/12.221389

KEYWORDS: Sensors, Photoresistors, Semiconductors, Field effect transistors, Electric field sensors, Neodymium, Transistors, Quantum efficiency, Information operations, Infrared sensors

Read Abstract +

Proceedings Article | 17 October 1994 Paper

Photoelectric cross talk between the elements of an extrinsic photoconductor detector array at low backgrounds

Boris Fouks, Vasily Kocherov, Igor Taubkin, Leonid Vinokurov, Nicolas Zaletaev

Proceedings Volume 2269, (1994) https://doi.org/10.1117/12.188671

KEYWORDS: Sensors, Detector arrays, Infrared sensors, Semiconductors, Switches, Photoresistors, Infrared detectors, Electric field sensors, Infrared technology, Modulation

Read Abstract +

SPIE Journal Paper | 1 May 1994

Photoresponse of low-background extrinsic infrared detector arrays

Boris Fouks, Vasily Kocherov, Igor Taubkin, Leonid Vinokurov, Nicolas Zaletaev

OE, Vol. 33, Issue 05, (May 1994) https://doi.org/10.1117/12.10.1117/12.165801

KEYWORDS: Sensors, Detector arrays, Electric field sensors, Switches, Infrared detectors, Semiconductors, Infrared sensors, Photoresistors, Signal detection, Photodetectors

Read Abstract +

Showing 5 of 10 publications

Conference Committee Involvement (4)

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI

3 August 2009 | San Diego, California, United States

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X

11 August 2008 | San Diego, California, United States

Hard X-Ray and Gamma-Ray Detector Physics IX

27 August 2007 | San Diego, California, United States

Hard X-Ray and Gamma-Ray Detector Physics VIII

14 August 2006 | San Diego, California, United States

Keywords/Phrases

Search In:

Publication Years