Mr. Nils Roos Profile

Nils Roos

at Univ Wuppertal

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Author

Publications (4)

Proceedings Article | 16 June 2003 Paper

Impact of vacuum environment on the hot embossing process

Nils Roos, Matthias Wissen, Thomas Glinsner, Hella-Christin Scheer

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482750

KEYWORDS: Polymers, Semiconducting wafers, Lithography, Visualization, Photomicroscopy, Optical lithography, Photomasks, Particles, Temperature metrology, Nanoimprint lithography

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Proceedings Article | 1 July 2002 Paper

Low-temperature wafer-scale warm embossing for mix and match with UV lithography

Hubert Schulz, Matthias Wissen, Nils Roos, Hella-Christin Scheer, Karl Pfeiffer, Gabi Gruetzner

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472295

KEYWORDS: Ultraviolet radiation, Glasses, Lithography, Semiconducting wafers, Polymers, Scanning electron microscopy, Nanoimprint lithography, Epoxies, Photoresist processing, Floods

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Proceedings Article | 1 July 2002 Paper

Performance of 4-in. wafer-scale thermoset working stamps in hot embossing lithography

Nils Roos, Hubert Schulz, Marion Fink, Karl Pfeiffer, Frank Osenberg, Hella-Christin Scheer

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472296

KEYWORDS: Silicon, Polymers, Lithography, Scanning electron microscopy, Semiconducting wafers, Ultraviolet radiation, Plasma, Nanoimprint lithography, Coating, Distortion

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Proceedings Article | 20 August 2001 Paper

Nanoimprint lithography with a commercial 4-in. bond system for hot embossing

Nils Roos, Thomas Luxbacher, Thomas Glinsner, Karl Pfeiffer, Hubert Schulz, Hella-Christin Scheer

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436661

KEYWORDS: Polymers, Semiconducting wafers, Lithography, Nanoimprint lithography, Polymethylmethacrylate, Silicon, Wafer bonding, Profilometers, Scanning electron microscopy, Semiconductors

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In order to examine the suitability of nanoimprinting for wafer scale pattern definition, a commercially available hot embossing system, the EV520HE of EVGroup, Austria, has been used to imprint 4 inch substrates. The EV520HE is based on a production-proven wafer bonding system which guarantees compatibility with semiconductor fabrication conditions. A 4 inch silicon wafer fully patterned with structures from 400 nm to 100 micrometers size was used as a stamp. The patterns, having a nominal height of 260 nm were defined in poly-Si over SiO₂ by reactive ion etching. Different anti- sticking layers were applied to the stamps by monolayer self-assembling, among them (1,1,2,2 H perfluoroctyl)- trichlorosilane. Two different polymers, polymethylmethacrylate (PMMA) and a commercially available nanoimprint resist were used to spin-coat the substrates. Imprints were performed with temperatures of up to 225 degree(s)C, forces between 10 bar and 55 bar and holding times of 5 and 15 minutes. After separation of stamp and sample the imprints were characterized by a surface profiler and inspected by an optical microscope as well as a scanning electron microscope. Different qualities of pattern transfer according to the used process parameters were achieved, but patterning of the whole sample surface was always observed. In contrast to radiation-based lithography, the difficulties are based in imprinting of larger features whereas structures of 400 nm size were reproduced with high quality. Therefore the largest patterns of the stamp, 100 micrometers square bond pads, were used for imprint quality assessment, judged by the degree of stamp cavity filling around the pads. High quality was achieved by embossing at 225 degree(s)C with a hold time of 5 minutes at a pressure of 55 bar. For full wafer imprint only a small degradation of imprint quality from the center towards the periphery was observed. Further optimization of the process is required to minimize residual layer thickness for the hot embossing lithography step, taking into account the visco-elastic properties of the polymer material.

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