Ms. Oxana V. Iaseniuc Profile

Oxana V. Iaseniuc

researcher

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Publications (12)

Proceedings Article | 31 December 2020 Paper

Photoconductivity spectra of amorphous multilayer structures

O. Iaseniuc, M. Iovu

Proceedings Volume 11718, 117180X (2020) https://doi.org/10.1117/12.2571100

KEYWORDS: Thin films, Electrodes, Germanium, Multilayers, Arsenic, Interfaces, Glasses, Selenium, Aluminum

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Proceedings Article | 31 December 2018 Paper

Micro-Raman spectra of the amorphous GexAsxSe1-2x chalcogenide glasses

O. Iaseniuc, M. Iovu, A. Ghiulnare, R. Mesterca, A. Jderu, M. Enachescu

Proceedings Volume 10977, 109770K (2018) https://doi.org/10.1117/12.2323655

KEYWORDS: Germanium, Selenium, Micro raman spectroscopy, Glasses, Arsenic, Thin films, Raman spectroscopy, Chalcogenide glass, Laser bonding, Laser irradiation

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Proceedings Article | 14 December 2016 Paper

Absorption and emission spectra of Ga1.7Ge25As8.3S65 glasses doped with rare-earth ions

E. Lupan, O. Iaseniuc, V. Ciornea, M. Iovu

Proceedings Volume 10010, 100100P (2016) https://doi.org/10.1117/12.2243163

KEYWORDS: Glasses, Absorption, Ions, Luminescence, Chalcogenide glass, Gallium, Germanium, Neodymium, Dysprosium, Holmium

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Proceedings Article | 14 December 2016 Paper

Influence of the coordination number Z on the micro-Raman spectra of ternary chalcogenide glasses

M. Iovu, O. Iaseniuc, D. Dinescu, M. Enachescu

Proceedings Volume 10010, 100100O (2016) https://doi.org/10.1117/12.2243147

KEYWORDS: Thin films, Raman spectroscopy, Glasses, Chalcogenide glass, Micro raman spectroscopy, Germanium, Tin, Selenium, Arsenic, Optoelectronics

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Proceedings Article | 14 December 2016 Paper

Photoconductivity of amorphous GexAsxSe1-2x and (As4S3Se3)1-xSnx thin films

O. Iaseniuc, M. Iovu

Proceedings Volume 10010, 100101J (2016) https://doi.org/10.1117/12.2242880

KEYWORDS: Thin films, Arsenic, Glasses, Optoelectronics, Thin films, Electrodes, Glasses, Selenium, Germanium, Tin, Systems modeling, Chemical species

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Proceedings Article | 20 February 2015 Paper

Nano-indentation investigations of (As2Se3)1-x: Snx and (As4S3Se3)1-x: Snx glasses

D. Harea, E. Harea, O. Iaseniuc, M. Iovu

Proceedings Volume 9258, 92581T (2015) https://doi.org/10.1117/12.2069894

KEYWORDS: Tin, Glasses, Thin films, X-ray diffraction, Chalcogenides, Selenium, Chalcogenide glass, Optical properties, Diffraction, Spectroscopy

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Proceedings Article | 20 February 2015 Paper

Optical and Raman spectroscopy of (As4S3Se3)1-X:SnX glasses

Oxana Iaseniuc, Mihail Iovu, Matei Badea, Iulian Boerasu, Marius Enachescu

Proceedings Volume 9258, 92580N (2015) https://doi.org/10.1117/12.2065804

KEYWORDS: Raman spectroscopy, Glasses, Thin films, Tin, Chalcogenide glass, Doping, Infrared radiation, Vitreous, Mid-IR, Absorption

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Proceedings Article | 20 February 2015 Paper

Electron-beam recording of patterns in chalcogenide films

S. Sergeev, M. Iovu, O. Iaseniuc

Proceedings Volume 9258, 92580S (2015) https://doi.org/10.1117/12.2069974

KEYWORDS: Diffraction gratings, Diffraction, Thin films, Electron beams, Chalcogenides, Refractive index, Helium neon lasers, Modulation, Absorption, Raster graphics

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Proceedings Article | 20 February 2015 Paper

Steady-state photoconductivity of amorphous (As4S3Se3)1-x:Snx films

O. Iaseniuc, M. Iovu, I. Cojocaru, A. Prisacar

Proceedings Volume 9258, 92580M (2015) https://doi.org/10.1117/12.2065542

KEYWORDS: Tin, Thin films, Diffraction, Glasses, Holography, Arsenic, Electrodes, Transmittance, Image registration, Selenium

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Amorphous arsenic trisulfide (As₂S₃) and arsenic triselenide (As₂Se₃) are among widely investigated amorphous materials due to its interesting electrical, optical and photoelectrical properties. In order to improve the physical properties and recording characteristics, and to extend the spectral range of photosensibility, a special interest represents the mixed amorphous materials, like (As₂S₃):(As₂Se3). Chalcogenide vitreous semiconductors (ChVS) of the As-S-Se system exhibit photostructural transformations with reversible and irreversible properties, and are promising materials as registration media for holography and optical information, for fabrication of diffractive elements, and other optoelectronic applications. Because many optoelectronic devices on amorphous semiconductors are based on the photoconductivity effect, special interests represent investigation of the stationary and non-stationary characteristics of photoconductivity. In this paper the experimental results of steady-state photoconductivity and holographic characteristics of amorphous (As4S₃Se₃)_1-x:Sn_x thin films are presented. It was shown that the photoconductivity spectra depend on the polarity on the top illuminated electrode and on the Sn concentration in the host glass. The photosensitivity of amorphous ((As4S₃Se₃)_1-x:Sn_x thin films is almost constant for all Sn-containing glasses. The Moss rule was used for determination of the optical forbidden gap E_g from the photoconductivity spectra. It was demonstrated that the investigated amorphous films are sensitive to the light irradiation and can be used as effective registration media for holographic information. The relaxation of photodarkening in amorphous (As4S₃Se₃)_1-x:Sn_x thin films was investigated and was shown that the relaxation curves of transmittance T/T0 = f(t) can be described the stretch exponential function T(t)/T(0) = A0+Aexp[-(t-t0)/τ]^(1-β). The kinetics of diffraction efficiency growth η(t) was measured by registration of the laser intensity of the 1-st interference maximum versus time exposure. With increasing of Sn concentration in amorphous (As4S₃Se₃)_1-x:Sn_x thin films up to 6.0 at. % Sn, the diffraction efficiency η increases, than for higher concentrations of tin, decreases.

Proceedings Article | 1 November 2012 Paper

Spectroscopic study of amorphous As[sub]2[/sub]Se[sub]3[/sub]:Sn[sub]x[/sub] and (As[sub]2[/sub]S[sub]1.5[/sub]Se[sub]1.5[/sub])[sub]1-x[/sub]:Sn[sub]x[/sub] thin films

O. Iaseniuc, D. Harea, M. Iovu, E. Colomeico, E. Harea, I. Cojocaru, D. Shepel, A. Meshalkin

Proceedings Volume 8411, 84110L (2012) https://doi.org/10.1117/12.956493

KEYWORDS: Thin films, Tin, Glasses, Absorption, Refractive index, Chalcogenide glass, Selenium, Transmittance, Chemical species, Spectroscopy

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Proceedings Article | 1 November 2012 Paper

Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films

O. Iaseniuc

Proceedings Volume 8411, 84110K (2012) https://doi.org/10.1117/12.954163

KEYWORDS: Glasses, Thin films, Tin, Absorption, Refractive index, Chalcogenide glass, Transmittance, Mid-IR, Chemical species, Helium neon lasers

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Proceedings Article | 1 November 2012 Paper

Characterization of spin-coated thin polymer films by optical spectroscopy

Alexei Meshalkin, Diana Harea, Oxana Iaseniuc, Diana Shepel, Liudmila Bets

Proceedings Volume 8411, 84111M (2012) https://doi.org/10.1117/12.965297

KEYWORDS: Polymer thin films, Polymers, Refractive index, Thin films, Optical spectroscopy, Interferometry, Coating, Photorefractive polymers, Transmittance, Polymethylmethacrylate

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Showing 5 of 12 publications

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