Mr. Pan Tan Profile

Pan Tan

at Univ. of Electronic Science and Technology of Chin

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Proceedings Article | 25 October 2016 Paper

Effect of the introduction of Ag on the microstructures and electrical properties of polycrystalline VO2 thin films

Deen Gu, Zhou Xin, Zhihui Wang, Pan Tan, Yadong Jiang

Proceedings Volume 9686, 96860L (2016) https://doi.org/10.1117/12.2242620

KEYWORDS: Silver, Thin films, Composites, Particles, Crystals, Raman spectroscopy, Scanning electron microscopy, Atomic force microscopy, Vanadium, Oxides

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We investigate the effect of the introduction of Ag on the microstructures and electrical properties of polycrystalline VO₂ thin films prepared by reactively sputtering process. X-ray diffraction patterns and Raman spectra indicate that Ag/VO₂ composite thin films have similar monoclinic structure to undoped VO₂ films. However, the existence of Ag greatly reduces the grain size of monoclinic VO₂. Differently, the data from scanning electron microscopy and atomic force microscopy reveal that the introduction of Ag obviously increases the particle size and root-mean-square(RMS) roughness of VO₂ films. The opposite changing tendency between the particle size and grain size probably results from the existing forms of Ag in Ag/VO₂ composite thin films. On one hand, the existence of Ag in VO₂ lattice and in the grain boundaries inhibits the growth of monoclinic VO₂ crystals, thus the grain size decreases. On the other hand, redundant Ag forms pure cubic Ag phase with much larger particle size due to the strong tendency of the Vomer-Webber growth of Ag at elevated temperature. Ag particles in VO₂ films cause rougher surface morphologies and larger particle size than undoped VO₂ films. The electrical properties Ag/VO₂ composite thin films were also investigated. A small amount of Ag depresses the amplitude of semiconductor-metal phase transition (SMPT) of VO₂. With the further increase of Ag concentration, the SMPT feature of VO₂ thin film gradually disappear. This provides a promising approach for preparing thermal-sensitive vanadium oxide films with high temperature coefficient of resistivity and without SMPT feature for bolometer infrared detectors.

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