Unspecified Pei En Weng Profile

Pei En Weng

at Taiwan Semiconductor Manufacturing Co Ltd

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 12 November 2024 Presentation + Paper

Repair processes on next generation EUV materials

C. Chen, P. Weng, C. Chiang, P. Chen, Vincent C. Wen, Gerson Mette, Christian Felix Hermanns, Thorsten Hofmann, Klaus Edinger, Y. Li

Proceedings Volume 13216, 132160Q (2024) https://doi.org/10.1117/12.3034694

KEYWORDS: Etching, Photomasks, Extreme ultraviolet, Electron beams, Mask cleaning

Read Abstract +

In the realm of next-generation EUV masks, several material candidates show promising absorber behaviors, ranging from binary to phase-shift types. However, the mask repair process presents challenges when managing wafer windows for repaired defects. Precious profile control, high repair-defect durability and clean reticle surface need to be sustained to ensure lithography processes window. In this paper, several materials’ opaque defect etching is evaluated by using ZEISS e-beam based MeRiT^® neXT repair tools, which offer an optimal physico-chemical process with right precursor chemistry and an optimized scanning of the e-beam over the surface to ensure repair quality. Moreover, longer repair time for next generation masks also challenges post-repair clean yield due to poor wettability from etching byproduct redeposition on reticle surface. Thus, we control a plasma flushing vacuum chamber application to eliminate surface wettability degradation, ensuring high post-repair clean yield. Our comprehensive strategy not only addresses current challenges with better reticle quality and longer lifetime but also paves the way for the seamless integration of advanced EUV mask materials into the future of semiconductor lithography.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years