The hot Carrier Solar Cell (HCSC) allows the photon-induced hot carriers (the carriers with energy larger than the band gap) to be collected before they completely thermalise. The absorber of the HCSC should have a large phononic band gap to supress Klemens Decay, which results in a slow carrier cooling speed. In fact, a large phononic band gap likely exists in a binary compound whose constituent elements have a large mass ratio between each other. Binary hydrides with their overwhelming mass ratio of the constituent elements are important absorber candidates. Study on different types of binary hydrides as potential absorber candidates is presented in this paper. Many binary transition metal hydrides have reported theoretical or experimental phonon dispersion charts which show large phononic band gaps. Among these hydrides, the titanium hydride (TiHX) is outstanding because of its low cost, easy fabrication process and is relatively inert to air and water. A TiHX thin film is fabricated by directly hydrogenating an evaporated titanium thin film. Characterisation shows good crystal quality and the hydrogenation process is believed to be successful. Ultrafast transient absorption (TA) spectroscopy is used to study the electron cooling time of TiHX. The result is very noisy due to the low absorption and transmission of the sample. The evolution of the TA curves has been explained by band to band transition using the calculated band structure of TiH2. Though not reliable due to the high noise, decay time fitting at 700nm and 600nm shows a considerably slow carrier cooling speed of the sample.
The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band
edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65%
under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but
modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the
required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and
test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon
band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the
way for their development to fully functioning high efficiency solar cells.
The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.
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