Dr. Plamen P. Paskov Profile

Dr. Plamen P. Paskov

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Publications (8)

Proceedings Article | 23 February 2018 Paper

Thermal conductivity of bulk and thin film [beta]-Ga2O3 measured by the 3[omega] technique

N. Blumenschein, M. Slomski, P. Paskov, F. Kaess, M. Breckenridge, J. Muth, T. Paskova

Proceedings Volume 10533, 105332G (2018) https://doi.org/10.1117/12.2288267

KEYWORDS: Thin films, Gallium, Tin, Crystals, Transmission electron microscopy, Doping, Sapphire, Oxides

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Proceedings Article | 3 March 2011 Paper

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Bo Monemar, Plamen Paskov, Galia Pozina, Carl Hemmingsson, Peder Bergman, David Lindgren, Lars Samuelson, Xianfeng Ni, Hadis Morkoç, Tanya Paskova, Zhaoxia Bi, Jonas Ohlsson

Proceedings Volume 7939, 793907 (2011) https://doi.org/10.1117/12.874687

KEYWORDS: Gallium nitride, Magnesium, Metalorganic chemical vapor deposition, Doping, Excitons, Phonons, Luminescence, Acoustics, Quantum wells, Nanowires

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Proceedings Article | 28 February 2008 Paper

Photoluminescence study of near-surface GaN/AlN superlattices

P. Paskov, B. Monemar, T. Paskova, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6894, 68940G (2008) https://doi.org/10.1117/12.759452

KEYWORDS: Stereolithography, Laser sintering, Gallium nitride, Aluminum nitride, Interfaces, Superlattices, Luminescence, Metalorganic chemical vapor deposition, Quantum wells, Field effect transistors

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Proceedings Article | 15 February 2008 Paper

Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis

T. Paskova, A. Hanser, E. Preble, K. Evans, R. Kröger, F. Tuomisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, P. Paskov, B. Monemar

Proceedings Volume 6894, 68940D (2008) https://doi.org/10.1117/12.767628

KEYWORDS: Gallium nitride, Interfaces, Transmission electron microscopy, Sapphire, Ions, Metalorganic chemical vapor deposition, Gallium, Silicon, Visualization, Reflection

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Proceedings Article | 3 March 2006 Paper

Microscopic emission properties of nonpolar α-plane GaN grown by HVPE

T. Paskova, R. Kroeger, P. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, J. Speck, S. Nakamura

Proceedings Volume 6121, 612106 (2006) https://doi.org/10.1117/12.645672

KEYWORDS: Gallium nitride, Transmission electron microscopy, Visualization, Metalorganic chemical vapor deposition, Sapphire, Point spread functions, Imaging spectroscopy, Scanning electron microscopy, Crystals, Edge emitting semiconductor lasers

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Proceedings Article | 11 June 2003 Paper

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Bo Monemar, Plamen Paskov, H. Haratizadeh, Galina Pozina, J. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511285

KEYWORDS: Quantum wells, Electroluminescence, Gallium nitride, Silicon, Doping, Luminescence, Optical properties, Excitons, Interfaces, Polarization

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Proceedings Article | 27 December 1996 Paper

Lithium triborate parametric oscillator with ultrashort pulses

Lubomir Pavlov, Nadejda Kaymakanova, Luben Ivanov, Plamen Paskov

Proceedings Volume 3052, (1996) https://doi.org/10.1117/12.262920

KEYWORDS: Crystals, Nonlinear crystals, Optical parametric oscillators, Oscillators, Mode locking, Mirrors, Ultrafast phenomena, Lithium, Refractive index, Laser crystals

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Proceedings Article | 1 April 1992 Paper

Nonlinear optical diagnostics of the properties of IV-VI semiconductor epitaxial structures

Lubomir Pavlov, Plamen Paskov

Proceedings Volume 1723, (1992) https://doi.org/10.1117/12.58643

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Showing 5 of 8 publications

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