Chilas develops off-the-shelf laser sources based on hybrid integration of Photonic Integrated Chips (PICs). Combining the high optical powers of semiconducting optical amplifiers (SOAs) with low-loss wavelength tunable mirror structures on Si3N4 PICs results in compact and robust tunable laser sources. These extended cavity diode lasers (ECDLs) exhibit unique characteristics like wide tuning ranges (>100 nm), ultra-narrow linewidths (<1 kHz) and high output powers. Here we present up to 162.5 mW of optical output power by combining two SOAs inside a single cavity, thereby scaling the output power without the need of additional optical amplification on the output port. The presented laser operates inside the telecom C-band, but the strategy can be tailored to other wavelengths like 850 nm, 780 nm and 690 nm, where Si3N4 plays a key role. This new generation of hybrid integrated ECDLs, exhibiting high optical output powers, wide wavelength tuning ranges and ultra narrow linewidths, opens up a wide range of applications.
Hybrid integration of semiconductor optical amplifiers with frequency-selective feedback circuits, implemented using low-loss Si3N4 waveguides, enables robust chip-sized lasers with outstanding properties. Deploying ring resonators as a tunable feedback filter provides single-mode operation over a wide wavelength range. Moreover, these rings resonantly enhance the cavity length, which results in ultra-narrow intrinsic linewidth, as low as 40 Hz.
Here, we present an overview on state-of-the-art developments regarding these lasers. We compare linewidth and tuning results for different feedback circuit configurations. Finally, we report on the first demonstration of a hybrid-integrated semiconductor laser that operates in the visible wavelength range.
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