We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization-sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers.
Imaging arrays of direct detectors in the 0.5-5 THz range are being experimentally developed. Terahertz active imaging
with amplitude-modulated quantum cascade lasers emitting at 2.5 and 4.4 THz performed by using an antenna-coupled
superconducting microbolometer. We then present two room-temperature terahertz detector technologies compatible
with monolithic arrays: i) GaAs Schottky diodes with air-bridge sub-micron anodes; ii) high electron mobility transistors
with sub-micron Schottky gate. Performances, requirements and fabrication costs of the different detector technologies
are compared.
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