In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, was grown by molecular beam epitaxy (MBE) on GaSb substrate. At 150K, dark current measurements shows a device in the Shockley-Read-Hall (SRH) regime but with an absolute value comparable to the state-of-the-art. A quantum efficiency of 50% at the wavelength of 3 μm for a 3 μm thick absorption layer is found in simple pass configuration and front-side illumination. Combined with lifetime measurements performed on dedicated samples through time resolved photoluminescence (TRPL) technique, mobility is extracted from these measurements by using a theoretical calculation of the quantum efficiency thanks to Hovel’s equations. Such an approach helps us to better understand the hole minority carrier transport in Ga-free T2SL MWIR XBn detector and therefore to improve its performance.
In this paper, we study the influence of three different etching depths on electrical and electro-optical properties of nonpassivated T2SL nBn Ga-free pixel detector having a 5μm cut-off wavelength at 150 K. The study shows the strong influence of lateral diffusion length on the shallow etched pixel properties and therefore, the need to perform etching through the absorber layer to avoid lateral diffusion contribution. The lowest dark current density was recorded for a deep-etched detector, on the order of 1 × 10-5 A/cm2 at 150 K and operating bias equal to – 300 mV. The quantum efficiency of this deep-etched detector is measured close to 55 % at 150 K, without anti-reflection coating. A comparison between electro-optical performances obtained on the three etching depths demonstrates that the etching only through the middle of the absorber layer (Mid-etched) allows eliminating lateral diffusion contribution while preserving a good uniformity between the diode’s performance. Such result is suitable for the fabrication of IR focal plane arrays (FPA).
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