We report on the growth and characterization of κ-Ga2O3 films grown at varying temperatures in the range of 450-700 ˚C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 ˚C and 600 ˚C, which have (2̅ 01)-oriented β-Ga2O3 incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga2O3 phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga2O3 films at 700 ˚C in ambient air led to improved crystalline quality and reduced grain size.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.