During the past several decades physical vapor transport (PVT) method has been extensively used for developing laser and electronic and optical sensor materials especially for incongruent and high vapor materials. Extensive careful studies of the NASA Marshall Space Flight Center on ZnSe growth by PVT has demonstrated that both thermal and solutal convection play very important roles on the quality of crystals and can be controlled by microgravity experiments. In case, the growth is performed by sputtering or systems such as DENTON, it is very difficult to control fluid flow and both thermal and solutal convective flows. We have demonstrated that by controlling the transport path, temperature of substrate and source and using purified source micron size thick ness can be achieved. We will present the experimental results of pure and doped lead selenide (PbSe) which demonstrated various morphologies and bandgap based on size of particles based on growth condition.
There is a strong need for rad hard and high operating temperature IR detectors for space environment. Heavy metal Selenides (high Z and large density) have been investigated for more than half century for high operating temperature mid wave infrared (MWIR) applications. Most of the efforts have been devoted to make detector arrays on high-resistivity Si substrates for operating wavelengths in the 1.5 to 5.0 μm region using physical vapor transport grown poly crystalline materials. For most of the biological spectral and imaging applications, short wave infrared (SWIR) detectors have shown better performance. Recent growth materials have shown variation in morphology with slight change in growth conditions and hence variation in performance parameters such as bandgap, mobility and resistivity from sample to sample. We have performed growth and optical characterization of binary materials CdSe-PbSe to determine the suitability for IR detector. We have determined bandgap using several theoretical models for different morphologies observed during growth on silicon wafers.
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