We present an optical delay line structure incorporating InxGa1-xAs quantum wells in the GaAs quarter- wave layers of a GaAs/AlAs distributed Bragg reflector. Applying an electric field across the quantum wells shifts and broadens the e1-hh1 exciton peak via the quantum- confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. Theoretical results predict tunable delays on the order of 50 fs for a 30-period structure incorporating 3 quantum wells per GaAs layer. Structure design, growth and fabrication are detailed. Preliminary group delay measurements on large-area samples with no applied bias are presented.
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