Marketing studies by EPIC show significant revenue opportunities by 2012 for UHB-LEDs in the automotive, LCD backlighting, and architectural lighting sectors. The goal of this workshop on manufacturing issues is to consider five key issues for UHB-LED manufacturing and to propose solutions that will pave the way to full exploitation of the opportunities.
Innovations in photonics technology have the potential to revolutionize both the inside and the outside of the automobile, making driving, simpler, safer, and more economical. Some of the most interesting applications areas are: lighting, communications, night vision, display, entertainment, and controls. However, the commercialization of these technologies will depend on a number of factors: cost, proven improvements in safety, economy of operation, availability of mass-produced components with high uniformity and reliability, regulations, and standards. The automotive industry recognizes the utility of a roadmap to focus all players, from basic device manufacturing and component integrators, to set manufacturers and ultimately automotive assemblers. In this paper we report on progress on an important component of this roadmap concerning adaptive front-lighting systems (AFS).
Planar photonic crystal structures are a new way to achieve the confinement and guiding of light in an optical circuit. Acceptably low levels of optical loss will be key to developing this technology into commercially viable devices. Meaningful measurement of the loss of these devices is complicated by their reduced size and their optical model structure. To date no satisfactory loss measurement of these waveguides has been made. We analyze the challenges to be reached that will lead to accurate and quantitative measurements.
Photonic crystal planar circuits designed and fabricated in silicon on silicon dioxide are demonstrated. Our structures are based on two-dimensional confinement by photonic crystals in the plane of propagation, and total internal reflection to achieve confinement in the third dimension. These circuits are shown to guide light at 1550 nm around sharp corners where the radius of curvature is similar to the wavelength of light.
Extensive measurements and theoretical calculations have provided strong evidence
for the creation of direct bandgap superlattice structures from indirect bandgap Ge and Si.
Much of the experimental evidence for this conclusion is drawn from electroreflectance
measurements. Interpretation of this experiment begins with the standard lineshape fitting
analysis, but it is complicated by local electric fields and interference effects. We will discuss
these effects and how they can be separated from properties intrinsic to the electronic
structure.
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