In this work, the formation of micro-and nanoscale periodic structures on the surface of system SiO2/Si by nanosecond
laser pulses has been investigated. Under irradiation of experimental samples with ultraviolet ArF laser pulse (193 nm)
were obtained periodic wave-like structures on the surface. The dependence of the surface topology of system SiO2/Si on
the energy density of the laser pulse and the number of pulses has been studied.
In this work, we report an observation of process of local destruction monocrystalline silicon with a scanning beam
irradiation of pulse ytterbium fiber laser with a wavelength λ= 1062 nm, accompanied by the oxidation of ablation
microparticles. It is shown that depending on the power density of irradiation was observed a large scatter size of the
microparticles. From a certain average power density is observed beginning oxidation particulate emitted from the
surface of the irradiated area. By varying the parameters of the laser beam such as scanning speed, pulse repetition rate,
overlap of laser spot, radiation dose can be achieved almost complete oxidation of all formed during the ablation of
microparticles.
The formation of morphological structures on system SiO2/Si by pulsed ytterbium fiber laser has been investigated. The
resulting structures are investigated by atomic force microscopy. It is shown that during irradiation on surface of the
monocrystalline silicon wafer covered by a thin layer of thermally grown silicon dioxide (SiO2), there are significant
structural changes associated with localization on the surface of the silicon strips of slip-lines and grid of slip-line formed
by the intersection of these strips. It is also shown that exposed to laser radiation in the silicon-silicon dioxide system
there are structural changes that lead to the change of the electrophysical properties of SiO2/Si system. Changes in
electrophysical properties of the oxide and the interface are more observed in the area of direct exposure to the laser
beam on the silicon substrate where there are maximum structural changes of the silicon surface manifested in the form
of a lattice slip lines. It is found that there are laser-induced defects in areas remote from the irradiation zone.
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