Nitrogen doping was applied to enhance the velocity of amorphous-crystalline phase transformation. The nitrogen doping was able to produce tiny nitride precipitates uniformly distributed in the recording layer and provided numerous preferential sites for amorphous-crystalline transition. At the doping condition of N2/Ar ratio = 3%, the recrystallization velocity of GeInSbTe phase change recording media was increased up to 1.6 times without severely damaging the signal jitter values.
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