Perfect homo- and heteroepitaxial structures of n- and p-type conductivity on CdSb, In4Se3, In4Te3 semiconductors and their solid solutions were grown. On formed p-n-junctions there were investigated spectral dependence of photo-emf and detectivity in λ = 1 - 3 μm interval. It is shown the possibility of their using as IR-photodetectors.
Calculation and manufacturing methods of (lambda) equals 2,5-30 micrometers range interference IR-filters with deep suppression of short-wave obstacles based on the CdSb semiconductor monocrystal substrates with intrinsic absorption edge at (lambda) equals 2,5 micrometers are suggested.
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