This paper considers the possibility of constructing nonreactive memristor-based oscillators adding a device exhibiting negative differential resistance (NDR). The ambipolarity of the memristor I-V characteristic is shown to ensure the generation mode of such circuits. S-type and N-type variants of the memristor-based oscillator are analyzed. Device and circuit implementations of ambipolar memristors are suggested. NDR devices, as well as single-threshold comparators can be used in the implementation of ambipolar memristor-based oscillators.
A two dimensional model of the merged MOSFET (MMOS), a new multigate device with ambipolar conductivity, is constructed and analyzed. Two variants of the MMOS (thin and thick channel) are considered. In the first case, the distribution of potential in the channel can be calculated, and dependency of electron and hole currents on the control voltages is expressed in exponential integral functions. In the second case transcendental equations must be solved to obtain the potential in the channel volume. Equations for determining currents in simplified conditions are derived. Examples of the input, output and transfer characteristics of the MMOS are given.
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