Ms. Won Hee Chae Profile

Won Hee Chae

at Photronics Inc

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Proceedings Article | 27 May 2010 Paper

Pinhole defect study and process optimization

Won-Hee Chae, Guen-Ho Hwang, Soon-Kyu Seo, Dae-Han Kim, Dong-Heok Lee, Moon-Hwan Choi, Sang-Soo Choi, Dong-Gun Kim, Doo-Hoon Geum, Gi-Su Nam

Proceedings Volume 7748, 774812 (2010) https://doi.org/10.1117/12.867968

KEYWORDS: Photoresist developing, Photoresist materials, Liquids, Photoresist processing, Polymers, Dry etching, Adsorption, Electron beams, Electron beam lithography, Image processing

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Positive CAR(Chemically Amplified Resist) is exposed by electron beam and PAGs(Photo Acid Generator) of photoresist release acids. Protecting groups of exposed polymers are de-protected by the acids and unexposed polymers still keep having protecting groups. It brings out dissolution difference between exposed and unexposed photoresist in develop process. Unexposed photoresist should be remained after develop process as much as needed for patterning. However, we have observed that unexposed photoresist also can be dissolved by developer droplet with hundreds micrometer size. It resulted in photoresist pinholes after develop process and clear defects after dry etching and photoresist stripping. Firstly, we have studied the pinhole defect formation mechanism by verifying the difference between normal develop process and developer droplet. It was confirmed that the dissolution difference are caused by phase environment difference, 2 phases(solid - liquid) for normal develop process and 3 phases(solid - liquid - air) at meniscus boundary for developer droplet. It also can be explained on different dissolution rate by droplet size. Also, possible defect types by developer droplet have been reviewed through process simulation to narrow down the critical steps in develop process. Besides, some of easy accessible process parameters have been evaluated to see whether they are effective or not for clear defect reduction.

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