Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical amplifiers and lasing has been investigated a lot. We investigated the erbium-doped lithium niobate on insulator (LNOI). Here, we fabricated a 1-mol% erbium-doped LNOI microdisk with a high-quality factor. C-band laser emission at ∼1530 and ∼1560 nm (linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974- and 1460-nm pumping. What’s more, spiral waveguide amplifiers were also fabricated by the CMOS-compatible technique. A maximum internal net gain of 8.3 dB at 1530 nm indicating a net gain per unit length of 15.6 dB/cm with a compact spiral waveguide of 5.3 mm length and ~0.06 mm2 footprint was demonstrated.
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