The simulation models of gallium nitride (GaN) nanostructure arrays are designed by COMSOL Multiphysics software package based on finite element method (FEM). The effects of changes of GaN nanowires in axial geometry on photoelectron concentration distributions performance are analyzed. And the absorptivity differences of nanorods, truncated-cones and inverted-pencil structures in ultraviolet band are studied. Analysis of simulation results pointed out that both truncated-corn arrays and inverted-pencil arrays have the ability of boosting light absorption compared to nanorod arrays. Thus, such positive conclusion of the axial structure changed GaN nanowires would offer new references for the photoemission layer design of the photocathode.
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