A low-loss LNOI edge coupler fabricated on 4-inch wafer with deep ultraviolet lithography was demonstrated. The coupler was fabricated on LNOI with 600 nm thin-film lithium-niobate by 180nm lithography and ICP etch process. The 600nm thin-film lithium-niobate was etched for three times to achieve the coupler with tri-layer structure and narrow taper tips of below 150 nm. The fiber to chip coupling loss is 0.84 dB and 1.3 dB per facet for TE light at 1550 nm, when coupled with lensed fibers, which have 4 μm and 3.5 μm mode field diameter, respectively. Furthermore, the coupling loss is less than 1 dB per facet in the wavelength range between 1520 to 1560 nm.
The responsivity and the bandwidth are both key parameters of a PD but also encounter tradeoff during the device designing due to the thickness of InGaAs layer absorbing light. In this paper, a balanced structure to achieve both high speed and relatively high responsivity is reported. A uni-traveling carrier PD(UTC-PD) structure is taking advantage of the high drift velocity to meet the rather high-speed exhibition. For responsivity enhancing, we apply back reflector beneath the top-illuminated UTC-PD based on micro transfer printing. To further increase the bandwidth of small size PD, we optimize the shape of CPW electrodes of PDs. With our final structure, the UTC-PD exhibits 3dB bandwidth of 100GHz and responsivity of 0.4A/W.
In this paper, we demonstrate a high-Q LNOI microdisk coupling with a silicon nitride (Si3N4) optical waveguide. Its resonance characteristic can be turned by a thermistor on the microdisk resonator. The LNOI microdisk resonator is fabricated by inductively coupled plasma-reactive ion etching (ICP-RIE). Its sidewall is further smoothed by employing chemical mechanical polishing (CMP) to improve the quality factor (Q-factor). The LNOI/Si3N4 heterogeneous integrated resonator shows a Q-factor of 2.58 × 105, and a wavelength tunability of ~14.5 pm/W.
A silicon hybrid photodetector was demonstrated based on die-to-die bonding technology. The vertically incident InGaAs/InP photodetector die was integrated on silicon-on-insulator (SOI) die by using divinyldisiloxane benzocyclobutene (DVS-BCB) as adhesive layer. A grating coupler was fabricated on SOI substrate to diffract the light out of the SOI waveguide into the detector. The measured coupling efficiency output at 1550 nm for the TE mode reached to 39.8%, which is equal to 8.2 dB fiber-to-fiber loss. After integrating, when the thickness of the BCB bonding layer was 380 nm, the optical loss reached to 13.8 dB with 30×30 μm2 device. The measured dark current, bandwidth and responsivity of the hybrid InGaAs/InP photodetector with light absorbing mesa of 10×10 μm2 were 37.7 nA, 30.9 GHz and 0.48 A/W respectively at -3 V DC bias.
A flat band-pass photonic filter is experimentally demonstrated on a silicon-on-insulator (SOI) substrate. The filter is composed of a micro-ring resonator assisted with an asymmetric Mach-Zehnder interferometer (MZI). By thermal tuning the ring, the device achieves a rapid roll-off on the band edges, a wide 3-dB bandwidth of 0.95 nm and a low crosstalk of 14 dB. The filter can be used in the WDM network and integrated microwave photonic signal processing.
A heterogeneous photonic integration of silicon photonic devices and III-V compound semiconductor photodetector (PD) is demonstrated by micro transfer printing (μ-TP). Via transfer printing, InP/InGaAs PIN PD is directly bonded on the top of silicon grating coupler by ultra-thin DVS-BCB adhesion layer. 0.4A/W of photo-responsibility @1550nm and ~25GHz of -3dB bandwidth are measured on printed PD. No deterioration in coupling loss is detected in the printed PD on the silicon gratings coupler with alignment accuracy of ±1μm. This technique enables a feasible route to photonic integrated circuits.
We have demonstrated a class of drift-enhanced InGaAs/InP p-i-n photodetectors with the top-illuminated light in the 1550 nm wavelength band. An InGaAsP layer is used at the InGaAs/InP hetero-interface to reduce the contact resistivity. For devices of 10 μm × 10 μm, 20 μm × 20 μm and 30 μm × 30 μm mesa areas, the 3-dB bandwidths are measured to be 32 GHz, 12 GHz and 6 GHz, respectively. Also we have obtained a dark current of 64 nA and a responsivity of 0.43 A/W at -4 V bias for 10 μm × 10 μm photodetector.
A series-coupled double-ring resonator with asymmetric radii is analyzed to achieve a filter response with a large free
spectral range (FSR), a narrow passband of tens of MHz and a small shape factor simultaneously for use in microwave
photonic channelizer. By introducing difference to the two radii, based on the vernier effect, the FSR of the resonator
filter can be extended while maintaining the narrow passband and the small shape factor. A filter response with a FSR of
29.444 GHz, a 3-dB bandwidth of 96 MHz and a shape factor of 3.17 is realized by numerical analysis.
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