4H-silicon carbide-on-insulator (4H-SiCOI) has emerged as a contender for integrated photonics owing to its properties such as CMOS compatibility, high second-and-third-order nonlinearities. So far, various micro-resonators have been realized on the 4H-SiCOI platform, enabling numerous nonlinear optical applications. However, micro-resonators for nonlinear optics featuring wide waveguides inherently suffer from avoid mode crossing (AMX) effect. Here, we introduce Euler bends to build micro-resonators on a 4H-SiCOI wafer prepared by the ion-cutting technique. The fabricated micro-resonators show high-Q values above 1×105 and the AMX effect is remarkably suppressed. The avoid-mode-crossing-free micro-resonators reported on the CMOS-compatible wafer-scale 4H-SiCOI platform would constitute an important ingredient for the envisaged large-scale integrated nonlinear photonic circuits.
SiC has emerged as a highly promising material for harnessing nonlinear processes, attributed to its inherent χ(2) and χ(3) nonlinearities. The recent introduction of SiC-on-insulator nanowaveguides with high-index contrast has enabled efficient dispersion engineering and strong light-matter nonlinear interaction. This advancement has consequently led to various nonlinear phenomena, including the generation of Kerr combs, supercontinuum, and second harmonic signals. Notably, none of the existing demonstrations have combined χ(2) and χ(3) nonlinear processes within a single device. In this study, we present a dispersion-engineered 4H-SiC-on-insulator nanowaveguide, which not only allows for the generation of octave-spanning supercontinuum through dispersive wave generation but also enables efficient frequency doubling of this dispersive wave. Our demonstration shows that the 4H-SiC-on-insulator is a versatile integrated platform for compact, multifunctional nonlinear devices.
Three different novel dry-etching methods have been employed to fabricate nanophotonic devices upon a thin-film lithium niobate on insulator material platform. Different dry-etching processes and their advantages, drawbacks and applicable scenarios are systematically studied. Ultra-smooth etching surface with roughness of 0.46 nm (Rq), low-loss ridge waveguides with extracted propagation loss of 1.42 dB/cm, and microring resonators with high optical quality factors up to 1.4×105 are demonstrated using the optimized low-loss etching recipe. The low-loss etching technique lays a foundation for monolithic integration of passive optical components with quantum dots, on-chip broadband electro- optic modulators and wafer-scale lithium niobate integrated photonic circuits.
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