Dr. Yu-lian Cao Profile

Dr. Yu-lian Cao

at Institute of Semiconductors CAS

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Proceedings Article | 13 November 2010 Paper

High brightness InAs/GaAs quantum dot tapered laser at 1.3 µm with high temperature stability

Yu-Lian Cao, Peng-Fei Xu, Hai-Ming Ji, Tao Yang, Liang-Hui Chen

Proceedings Volume 7844, 784404 (2010) https://doi.org/10.1117/12.869637

KEYWORDS: Temperature metrology, Laser damage threshold, Quantum dots, Laser stabilization, Waveguides, Semiconductor lasers, Optical filters, Semiconducting wafers, Thermal effects, Laser development

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High brightness InAs/GaAs quantum dot tapered lasers at 1.3μm were first developed with high temperature stability. The devices consisted of a straight index-guided section formed by a ridge waveguide (RW) and a gain-guided tapered section. To enhance the mode filtering, a pair of cavity spoiling grooves had been included. For two different laser lengths L =1.5mm and 3mm with a constant full taper angle φ_TR = 4°, the length of the ridge waveguide section L₂ was varied for 1.5 mm long devices, whose L₂ was 0.5mm and 1 mm, respectively. In case of L=3 mm, the L₂ was fixed at 1mm. For above-mentioned geometries, the light power (P) - current (I) characteristics and the beam quality factor (M²) were presented. The lasers with a smaller L₂ have higher threshold current due to the larger area of the tapered section at fixed total length. The beam quality can be improved with longer L and L₂ at fixed total length L. The M² was lower than the value of 3 measured under different light power, moreover, the M² increased with light power increasing. We also measured temperature dependence of threshold current for two kinds of lasers with L=1.5 and 3 mm. The threshold current was almost constant over a temperature range from 30 to 70°C. It is of important significance for the practical application because that the temperature range overlapped with the operating temperature range. In addition, temperature dependence of the M² for the lasers with L=3 mm was also studied.

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