Mr. Yusuke Kasahara Profile

Yusuke Kasahara

at EUVL Infrastructure Development Ctr Inc

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Author

Publications (11)

Proceedings Article | 19 March 2018 Presentation

Defect dynamics in directed self-assembly of block copolymers (Conference Presentation)

Tsukasa Azuma, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsuyoshi Kodera, Ken Miyagi, Masayuki Shiraishi, Ryota Matsuki, Terumasa Kosaka, Toshiyuki Himi, Seiji Nagahara, Alvin Chandra, Ryuichi Nakatani, Teruaki Hayakawa, Kenji Yoshimoto, Takuya Omosu, Mikihito Takenaka

Proceedings Volume 10586, 105860S (2018) https://doi.org/10.1117/12.2297310

KEYWORDS: Directed self assembly, Image processing, Signal processing, Electron beam lithography, Lithography, Annealing, Thin films, Epitaxy, Data modeling, 3D modeling

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Proceedings Article | 13 March 2018 Presentation + Paper

A simulation study on bridge defects in lamellae-forming diblock copolymers

Hironobu Sato, Katsuyoshi Kodera, Yuriko Seino, Yusuke Kasahara, Ken Miyagi, Masayuki Shiraishi, Tsukasa Azuma

Proceedings Volume 10586, 105860U (2018) https://doi.org/10.1117/12.2297287

KEYWORDS: Bridges, Polymethylmethacrylate, Picosecond phenomena, Etching, Molecular bridges, Reactive ion etching, Directed self assembly, Photomasks, Image processing, Chemical analysis

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Proceedings Article | 25 May 2017 Presentation

Nano-defect management in directed self-assembly of block copolymers (Conference Presentation)

Tsukasa Azuma, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsuyoshi Kodera, Phubes Jiravanichsakul, Teruaki Hayakawa, Kenji Yoshimoto, Mikihito Takenaka

Proceedings Volume 10146, 101460O (2017) https://doi.org/10.1117/12.2257936

KEYWORDS: Annealing, 3D modeling, Lithography, Optical lithography, Scattering, Atomic force microscopy, Data modeling, Semiconductor manufacturing, Directed self assembly, Materials processing

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Directed self-assembly (DSA) of block copolymers (BCPs) has been expected to become one of the most promising next generation lithography candidates for sub-15 nm line patterning and sub-20 nm contact hole patterning. In order to provide the DSA lithography to practical use in advanced semiconductor device manufacturing, defect mitigation in the DSA materials and processes is the primary challenge. We need to clarify the defect generation mechanism using in-situ measurement of self-assembling processes of BCPs in cooperation with modeling approaches to attain the DSA defect mitigation. In this work, we thus employed in-situ atomic force microscope (AFM) and grazing-incidence small angle X-ray scattering (GI-SAXS) and investigated development of surface morphology as well as internal structure during annealing processes. Figure 1 shows series of the AFM images of PMAPOSS-b-PTFEMA films during annealing processes. The images clearly show that vitrified sponge-like structure without long-range order in as-spun film transforms into lamellar structure and that the long range order of the lamellar structure increases with annealing temperature. It is well-known that ordering processes of BCPs from disordered state in bulk progress via nucleation and growth. In contrary to the case of bulk, the observed processes seem to be spinodal decomposition. This is because the structure in as-spun film is not the concentration fluctuation of disordered state but the vitrified sponge-like structure. The annealing processes induce order-order transition from non-equilibrium ordered-state to the lamellar structure. The surface tension assists the transition and directs the orientation. Figure 2 shows scattering patterns of (a) vicinity of film top and (b) whole sample of the GI-SAXS. We can find vertically oriented lamellar structure in the vicinity of film top while horizontally oriented lamellar structures in the vicinity of film bottom, indicating that the GI-SAXS measurement can clarify the variation of the morphologies in depth direction and that the surface tension affects the orientation of the lamellar structure. Finally a combination of the time development data in the in-situ AFM and the GI-SAXS is used to develop a kinetic modeling for prediction of dynamical change in three-dimensional nano-structures. A part of this work was funded by the New Energy and Industrial Technology Development Organization (NEDO) in Japan under the EIDEC project.

Proceedings Article | 4 April 2016 Paper

Advanced CD-SEM metrology for qualification of DSA patterns using coordinated line epitaxy (COOL) process

Takeshi Kato, Junko Konishi, Masami Ikota, Satoru Yamaguchi, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Tsukasa Azuma

Proceedings Volume 9778, 977816 (2016) https://doi.org/10.1117/12.2218605

KEYWORDS: Directed self assembly, Epitaxy, Chemical analysis, Line width roughness, Annealing, Etching, Line edge roughness, Polymethylmethacrylate, Lithography, Edge roughness

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Proceedings Article | 1 April 2016 Paper

Sub-10nm lines and spaces patterning using grapho-epitaxial directed self-assembly of lamellar block copolymers

Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Shinya Minegishi, Ken Miyagi, Hitoshi Kubota, Hideki Kanai, Katsuyoshi Kodera, Masayuki Shiraishi, Naoko Kihara, Yoshiaki Kawamonzen, Toshikatsu Tobana, Katsutoshi Kobayashi, Hitoshi Yamano, Tsukasa Azuma, Satoshi Nomura

Proceedings Volume 9777, 97771T (2016) https://doi.org/10.1117/12.2218787

KEYWORDS: Optical lithography, Metals, Photoresist processing, Semiconductor manufacturing, Semiconductors, Manufacturing, Epitaxy, Semiconducting wafers, Scanning electron microscopy, Silica, Directed self assembly, Etching, Photomasks, Electron beam lithography, Chemical mechanical planarization, Reactive ion etching, Metrology, Tin

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Proceedings Article | 1 April 2016 Paper

Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer

Hironobu Sato, Yusuke Kasahara, Naoko Kihara, Yuriko Seino, Ken Miyagi, Shinya Minegishi, Hitoshi Kubota, Katsutoshi Kobayashi, Hideki Kanai, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Masayuki Shiraishi, Hitoshi Yamano, Satoshi Nomura, Tsukasa Azuma, Teruaki Hayakawa

Proceedings Volume 9777, 97771S (2016) https://doi.org/10.1117/12.2218758

KEYWORDS: Molecular self-assembly, Polymers, Etching, Directed self assembly, Transmission electron microscopy, Silicon, Electron microscopes, Surface properties, Lithography, Reactive ion etching

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Proceedings Article | 23 March 2016 Paper

Reactive ion etching challenges for half-pitch sub-10-nm line-and-space pattern fabrication using directed self-assembly lithography

Yusuke Kasahara, Yuriko Seino, Hironobu Sato, Hitoshi Kubota, Hideki Kanai, Naoko Kihara, Shinya Minegishi, Ken Miyagi, Toshikatsu Tobana, Masayuki Shiraishi, Katsutoshi Kobayashi, Katsuyoshi Kodera, Hitoshi Yamano, Yoshiaki Kawamonzen, Tsukasa Azuma

Proceedings Volume 9782, 97820P (2016) https://doi.org/10.1117/12.2219081

KEYWORDS: Reactive ion etching, Optical lithography, Polymers, Lithography, Semiconductor manufacturing, Silicon, Metals, Semiconductors, Manufacturing, Directed self assembly, Photomasks, Scanning electron microscopy, Silica, Chemical mechanical planarization

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SPIE Journal Paper | 9 April 2015 Open Access

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

Naoko Kihara, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Hideki Kanai, Yoshiaki Kawamonzen, Katsuyoshi Kodera, Tsukasa Azuma, Teruaki Hayakawa

JM3, Vol. 14, Issue 02, 023502, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.023502

KEYWORDS: Etching, Polymethylmethacrylate, Optical lithography, Silicon, Polymers, Lithography, Scanning electron microscopy, Image processing, Polymerization, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Directed self-assembly lithography using coordinated line epitaxy (COOL) process

Yuriko Seino, Yusuke Kasahara, Hironobu Sato, Katsutoshi Kobayashi, Hitoshi Kubota, Shinya Minegishi, Ken Miyagi, Hideki Kanai, Katsuyoshi Kodera, Naoko Kihara, Yoshiaki Kawamonzen, Toshikatsu Tobana, Masayuki Shiraishi, Satoshi Nomura, Tsukasa Azuma

Proceedings Volume 9423, 942316 (2015) https://doi.org/10.1117/12.2085697

KEYWORDS: Etching, Picosecond phenomena, Lithography, Semiconducting wafers, Reactive ion etching, Metals, Scanning electron microscopy, Photoresist processing, Optical alignment, Directed self assembly

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Proceedings Article | 17 March 2015 Paper

RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process

Y. Kasahara, Y. Seino, K. Kobayashi, H. Kanai, H. Sato, H. Kubota, T. Tobana, S. Minegishi, K. Miyagi, N. Kihara, K. Kodera, M. Shiraishi, Y. Kawamonzen, S. Nomura, T. Azuma

Proceedings Volume 9428, 94280S (2015) https://doi.org/10.1117/12.2085704

KEYWORDS: Reactive ion etching, Optical lithography, Lithography, Etching, Epitaxy, Picosecond phenomena, Scanning electron microscopy, Silica, Semiconducting wafers, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory

Katsuyoshi Kodera, Hironobu Sato, Hideki Kanai, Yuriko Seino, Naoko Kihara, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, Tsukasa Azuma

Proceedings Volume 9049, 904926 (2014) https://doi.org/10.1117/12.2046159

KEYWORDS: Monte Carlo methods, Lithography, Particles, Thin film coatings, Systems modeling, Computer simulations, Image segmentation, Extreme ultraviolet lithography, Semiconductors, Directed self assembly

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Showing 5 of 11 publications

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