From latest nanotechnology advances, low-dimensional matter confinement delivered by nanostructuration or few-layer stacking offer new opportunities for ultimate light absorption performances. In this field, semiconducting 2D materials and photonic crystals have already demonstrated promising flexible optical properties from monoatomic to bulk structuration covering visible to IR spectral range. Today, these emerging materials such as Phosphorene, allow reconsideration of some physical effects such as photoconductivity. Indeed, its exploitation in integrated planar structures become c in terms of efficient local contactless control with a high degree of tunability by optics in association with high dark resistivity, fast carrier dynamics, and sub-wavelength light coupling solutions compatibility. Multiscale modeling and design tools implementing material anisotropic parameters from atomic configuration up to mesoscale, in complement with multiscale optical characterization in a large frequency bandwidth opens routes to new microwave signal processing functionalities such as switching, generation, amplification and emission over a large frequency bandwidth, that could not be achieved by full electronic solutions. This paper will report on latest demonstrations of high performance photoconductive structures for high frequency applications and review state-of-the-art research work in this area, with a specific focus on latest demonstrations for airborne applications.
A great interest has been lately initiated in the optoelectronics field for 2D materials with a tunable bandgap. Being able
to choose the bandgap of a material is a huge progress in optoelectronics, since it would permit to overcome the
limitation imposed by the graphene lack of energy bandgap, but also the restriction imposed by already used
semiconductor whose bandgap are fixed and cannot apply for IR-NIR applications. From DFT simulations
predictions, Black Phosphorus (bP) becomes a bidimensional semiconducting material with a direct tunable energy
bandgap from 0.3 eV to 2 eV by controlling number of layers. This material also has a picosecond carrier response
and exceptional mobilities under external excitation. Hence black phosphorus is a promising 2D material candidate
for photoconductive switching under a NIR optical excitation as in telecommunication wavelength range of
1.55 μm. In this paper, material electromagnetic properties analysis is described in a large frequency band from
optical to microwave measurements executed on different samples allowing energy bandgap and work function
dependency to fabrication techniques, anisotropy and multiscale optoelectronic device realization by switch contact
engineering and material passivation or encapsulation. Material implementation in microwave devices opens the
route to new broadband electronic functionalities triggered by optics, thanks to light/matter extreme confinement
degree. In this paper we present fabrication method of bP based microwave photoconductive switch, with a focus on
black phosphorus Raman characterization, and obtained performances.
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