In this work we investigate the application and optimization of GaSb buffers on Silicon for improved device performance in the mid-wave infrared (MWIR). In particular, we examine the nucleation process of AlSb to create a template for growth of the GaSb buffer, as well as the use of defect filtering layers for reducing residual threading dislocations in the buffer layer. The location of the defect filtering layer plays a role in its effectiveness. Threading dislocation densities as low as mid-10^7 defects/cm^2 have been achieved. This study includes analysis from photoluminescence spectroscopy, transmission electron microscopy, temperature-dependent x-ray diffraction studies, and x-ray diffraction reciprocal space mapping.
In this investigation, two techniques of epitaxial growth of GaSb quantum dots on silicon substrates are explored. The first method involves the direct nucleation of GaSb islands on the Silicon (100) substrate and an AlSb barrier layer. The second method combines selective-area epitaxy (SAE) with Vapor-Liquid-Solid (VLS) growth principles in order to achieve suitable growth temperatures for antimonides. Our analysis focuses on the presence of pseudomorphic strain due to the high mismatch in lattice constant between the dots and the substrate. Transmission electron microscopy and photoluminescence spectroscopy are used to characterize the dots analyzed in these studies.
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