In this paper, we firstly demonstrate a diode-pumped passive mode-locking laser based on a Tm:YAG crystal and a MoS2 saturable absorber. The Tm:YAG laser produced a 2.68 W continuous-wave (CW) output power at 2013.8 nm. A maximum average output power of 0.2 W was achieved at a pulse repetition rate of 232.2 MHz and a pulse width of about 297.5 ps were achieved under the passive mode-locking operation. In addition, the M2 factors were 1.07 and 1.05 in horizontal and vertical directions, respectively, indicating the near-diffraction limited beam propagation.
A passively Q-switched (PQS) Tm:YAP laser was faultlessly realized with the WSe2 nanosheets as the saturable absorber (SA). A 0.97-W average output power at 1987.5 nm and a 459.0-ns pulse duration were obtained with a 9.5% optical conversion efficiency, and a 11.2-μJ pulse energy and a 24.4-W peak power were gained with a 10.2-W pump power. In addition, the beam quality factors of 2 1.11 x M2x = and 2 1.16 y M2y = were obtained from Tm:YAP laser in continuous wave (CW) with the output power of 2W.
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