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21 March 2023 Progress in UV-B laser diodes fabricated on lattice relaxed AlGaN
Motoaki Iwaya, Ryosuke Kondo, Ryota Hasegawa, Ayumu Yabutani, Eri Matsubara, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2646560
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We have demonstrated RT pulsed operation of AlGaN-based UV-B LDs. In this presentation, we would like to introduce our recent efforts to achieve higher output power. To increase the output power of LDs, it is essential to increase the external differential quantum efficiency ηd, increase the input current, and reduce the threshold current. The ηd is determined by the carrier injection efficiency ηi, internal losses and mirror losses in the LD. In LD with the polarization doped structure, the polarized positive fixed charge formed at the interface of the pn junction allows free electrons to easily overflow to the p-AlGaN cladding layer side. Therefore, improving the ηi is one of the most effective approaches to increase the ηd. In this study, we investigated the increase of ηi through device simulators and actual experiments. Through these investigations, we have succeeded in achieving a peak power of over 150 mW in RT pulsed driving of UV-B LDs.
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Motoaki Iwaya, Ryosuke Kondo, Ryota Hasegawa, Ayumu Yabutani, Eri Matsubara, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, and Hideto Miyake "Progress in UV-B laser diodes fabricated on lattice relaxed AlGaN", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646560
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KEYWORDS
Semiconductor lasers
External quantum efficiency
Quantum efficiency
Laser damage threshold
Laser development
Medical devices
Mirrors
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