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22 November 2023 EUV actinic scatterometry for in-pattern phase metrology
Stuart Sherwin, Matt Hettermann, Dave Houser, Chami Perera, Patrick Naulleau
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Proceedings Volume PC12751, Photomask Technology 2023; PC127510P (2023) https://doi.org/10.1117/12.2688099
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States
Abstract
With EUV attenuated phase shift absorbers rapidly approaching maturity, actinic metrology soon will be required to ensure phase accuracy, uniformity, and stability. The target phase shift for these absorbers is carefully optimized to a value typically around 1.2pi for optimal printing. The additional 0.2pi is necessary due to mask 3D effects (M3D), which increasingly distort the near-field scattering and phase as the feature size is reduced. Therefore, EUV attenuated phase shift masks require phase metrology not only for large-area multilayer and absorber, but also for feature-dependent in-pattern phase. We demonstrate in-pattern phase measurement using spectroscopic variable angle scatterometry with the commercially available EUV Tech ENK (EUV n/k tool). We describe experiments validating the accuracy and precision of actinic scatterometry-based pattern phase measurements conducted on the ENK platform through direct comparison to synchrotron reference scattering measurements.
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Stuart Sherwin, Matt Hettermann, Dave Houser, Chami Perera, and Patrick Naulleau "EUV actinic scatterometry for in-pattern phase metrology", Proc. SPIE PC12751, Photomask Technology 2023, PC127510P (22 November 2023); https://doi.org/10.1117/12.2688099
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KEYWORDS
Extreme ultraviolet
Phase shifts
Metrology
Scatterometry
3D mask effects
Attenuation
Laser scattering
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