Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere

Akira Mishima; Yuji Tomita; Yoshiki Yano; Toshiya Tabuchi; Koh Matsumoto; Hideto Miyake

doi:10.1117/12.2292182

23 February 2018 Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere

Akira Mishima, Yuji Tomita, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Hideto Miyake

Author Affiliations +

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 1053204 (2018) https://doi.org/10.1117/12.2292182
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

In this study, we developed an annealing furnace for 4 inch wafers and used it to anneal AlN on a 4 inch c-plane sapphire substrate at 1700°C for 1 h in a pure N2 atmosphere by using the annealing furnace (STA1800, Taiyo Nippon Sanso). FWHM of the XRC of the (0002) of 48.6 arcsec, and that of the (10-12) of 278.2 arcsec was obtained.

Citation Download Citation

Akira Mishima, Yuji Tomita, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, and Hideto Miyake "Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053204 (23 February 2018); https://doi.org/10.1117/12.2292182

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