Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well

Prakash Pareek; Lokendra Singh; Nishit Malviya; Jitendra K. Mishra

doi:10.1117/12.2304310

4 May 2018 Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well

Prakash Pareek, Lokendra Singh, Nishit Malviya, Jitendra K. Mishra

Author Affiliations +

Proceedings Volume 10672, Nanophotonics VII; 1067223 (2018) https://doi.org/10.1117/12.2304310
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

This paper focus on the theoretical investigation of quantum confined Stark effect (QCSE) in strain compensated SiGeSn/GeSn single quantum well (QW). Eigen energies in presence of electric field, for Г valley conduction band (Г- CB) and heavy hole band (HH)) are obtained from the self consistent solution of coupled Schrödinger and Poisson equations by finite difference method. Absorption coefficient considering excitonic effect for direct transition of HH band to Г valley is calculated. A significant shift in absorption peak towards longer wavelengths is observed.

Citation Download Citation

Prakash Pareek, Lokendra Singh, Nishit Malviya, and Jitendra K. Mishra "Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well", Proc. SPIE 10672, Nanophotonics VII, 1067223 (4 May 2018); https://doi.org/10.1117/12.2304310

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