Ravi Ranjan,1,2 Prakash Pareek,1,3 Syed Sadique Anwer Askari,1 Mukul K. Das1
1Indian Institute of Technology (Indian School of Mines), Dhanbad (India) 2Darbhanga College of Engineering (India) 3Vaag Devi College of Engineering (India)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The Group IV Photonics (GFP) which include an alloy of Si, Ge & Sn that gives a direct bandgap material (GeSn, SiGeSn) in near and mid-IR region used as an active material in photonics devices. The multiple quantum well SiGeSn/GeSn transistor laser structure is considered in this paper and performance parameters are evaluated for the same. The result shows that the threshold base current density (2.6 kA/cm2) for the proposed device initially decreases with increasing number of quantum well (QW) and later on it saturates. The current gain and output photon density of the device decreases and increases respectively, with increasing number of QW.
Ravi Ranjan,Prakash Pareek,Syed Sadique Anwer Askari, andMukul K. Das
"Performance analysis of GeSn-alloy-based multiple quantum well transistor laser", Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105262A (23 February 2018); https://doi.org/10.1117/12.2290570
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Ravi Ranjan, Prakash Pareek, Syed Sadique Anwer Askari, Mukul K. Das, "Performance analysis of GeSn-alloy-based multiple quantum well transistor laser," Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105262A (23 February 2018); https://doi.org/10.1117/12.2290570