Paper
23 May 1989 High Speed Gaas Acoustic Charge Transport Multiplexer
M. J Hoskins, H L Hsiung, F. O Guediri
Author Affiliations +
Abstract
The application of GaAs acoustic charge transport (ACT) technology to the development of high speed charge read-out multiplexers for imaging systems is described. Barrier storage cell structures are developed to permit extended time integration of signal charge directly in the ACT channel while inhibiting SAW charge transport. These storage cells, coupled with lateral ACT channel charge injectors and a GaAs MESFET based non-destructive charge detec-tion circuit form the basis for a focal plane compatible multiplexer technology with high read-out rate and large dynamic range. The high performance charge transfer characteristics and focal plane compatibility obtained from cryogenic ACT device operation are demonstrated. The basic structure, func-tional principles and experimental operation of a single channel 64 cell developmental ACT multiplexer operating at 360 MHz SAW clock rate are presented. The work indicates that ACT technology has significant potential for high speed image read-out applications.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. J Hoskins, H L Hsiung, and F. O Guediri "High Speed Gaas Acoustic Charge Transport Multiplexer", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); https://doi.org/10.1117/12.952511
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Multiplexers

Electrons

Gallium arsenide

Electrodes

Photodiodes

Acoustics

Clocks

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