Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers

Yi Zhang; Fu-Hui Shao; Cheng-Ao Yang; Sheng-Wen Xie; Shu-Shan Huang; Ye Yuan; Jin-Ming Shang; Yu Zhang; Ying-Qiang Xu; Hai-Qiao Ni; Zhi-Chuan Niu

doi:10.1117/12.2532548

17 May 2019 Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

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Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111700V (2019) https://doi.org/10.1117/12.2532548
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

We report the optimum growth parameters of InAs/AlSb superlattices (SLs) for interband cascade lasers (ICL) grown by the solid-source molecular beam epitaxy(MBE). The InAs/AlSb superlattices samples were grown on GaSb substrate at different temperatures and characterized by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL). By changing the group-Ⅴ flux ratio during the SLs growth, the InAs/AlSb superlattices matched to GaSb substrate were obtained. Subsequently, the SLs were grown at different growth temperature. By photoluminescence we found the highest PL intensity was obtained when the SLs samples were grown at 458°C and the PL wavelength is at 1730 nm. From 10 × 10 μm² AFM image, we found the root mean square (RMS) of the sample grown at 458°C was 1.96 Å which indicates the low surface roughness and god surface morphology.

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Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, and Zhi-Chuan Niu "Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111700V (17 May 2019); https://doi.org/10.1117/12.2532548

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