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10 March 2020 Franz-Keldysh modulation in GeSn-based heterostructures (Conference Presentation)
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Proceedings Volume 11276, Optical Components and Materials XVII; 1127606 (2020) https://doi.org/10.1117/12.2546218
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We investigated at room temperature the Franz-Keldysh effect in GeSn layers with Sn concentrations up to 13%. Several p-i-n stacks with indirect and direct band-gaps were grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) with Ge2H6, Si2H6 and SnCl4 precursors. Direct band-gap energies and absorption coefficient were determined in transmission by electro-absorption measurements. The direct band-gap position was consistent with our k.p model. A maximum modulation of 1% was obtained at the direct band gap for a 0.5 V bias.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mathieu Bertrand, Lara Casiez, Andréa Quintero, Quang Minh Thai, Jérémie Chrétien, Nicolas Pauc, Rami Khazaka, Philippe Rodriguez, Jean-Michel Hartmann, Alexei Tchelnokov, Vincent Calvo, and Vincent Reboud "Franz-Keldysh modulation in GeSn-based heterostructures (Conference Presentation)", Proc. SPIE 11276, Optical Components and Materials XVII, 1127606 (10 March 2020); https://doi.org/10.1117/12.2546218
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KEYWORDS
Heterojunctions

Modulation

Germanium

Measurement devices

Photonics

Mid-IR

Silicon

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