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9 March 2020 Self-assembled and selective-area growth of GaN nanorods by liquid-target reactive magnetron sputter epitaxy (Conference Presentation)
Ching-Lien Hsiao, Elena Alexandra Serban, Justinas Palisaitis, Muhammad Junaid, Lars Hultman, Per O. Å. Persson, Jens Birch
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Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 113020G (2020) https://doi.org/10.1117/12.2550015
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Magnetron sputter epitaxy (MSE) is the standard process for the deposition of a wide range of industrially relevant coatings, operating with a low-energy ion assistance to minimize ion damage of the material, thus enabling fabrication of high-quality semiconductor materials for the optoelectronics. However, reports on the growth of GaN nanostructures by MSE are much less in comparison with molecular-beam epitaxy and metal-organic chemical vapor deposition. Here, we will present the study on the growth of single-crystal GaN nanorods by MSE using liquid Ga target. The talk will contain three parts: 1) the handling of liquid Ga target during sputtering; 2) self-assembled growth of GaN nanorods on cost-effective substrates; and 3) selective-area growth of GaN nanorods assisted by patterned substrates. Characterizations on structural and optical properties of the MSE-grown nanorods as well as the growth mechanism from nucleation stage to well-developed nanorods will be discussed.
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Ching-Lien Hsiao, Elena Alexandra Serban, Justinas Palisaitis, Muhammad Junaid, Lars Hultman, Per O. Å. Persson, and Jens Birch "Self-assembled and selective-area growth of GaN nanorods by liquid-target reactive magnetron sputter epitaxy (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020G (9 March 2020); https://doi.org/10.1117/12.2550015
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KEYWORDS
Nanorods
Gallium nitride
Epitaxy
Gallium
Ions
Liquids
Deposition processes
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