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As technology nodes shrink, OPC model accuracy needs to the fulfill tighter requirements. Those requirements can be met only under good process control. However, OPC model accuracy relies on the specific context. Ignoring the impact of process variation on OPC accuracy could lead to break edge placement error (EPE) budget. The OPC process monitoring project at imec is conducted on imec logic N7 M2 design at pitch 32nm use case and aims at quantifying long-term validity of the OPC model in the face of NXE:3400 scanner and process variations. To account and compensate for scanner and process variations impact, the ability of restoring OPC validity by OPC model dose tuning is tested.
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Dongbo Xu, David Rio, Werner Gillijns, Max Delorme, Christina Baerts, "NXE:3400 OPC process monitoring: model validity vs process variability," Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116091N (22 February 2021); https://doi.org/10.1117/12.2583870