Lloyd’s mirror interference lithography below a 22-nm pitch with an accessible, tabletop, 13.5 nm high-harmonic EUV source

Kevin Dorney; Sonia Castellanos; Esben Larsen; Fabian Holzmeier; Dhirendra Singh; Nadia Vandenbroeck; Danilo De Simone; Peter De Schepper; Alessandro VaglioPret; Clayton Bargsten; Seth L. Cousin; Daisy Raymondson; Eric Rinard; Rod Ward; Henry Kaptyen; Thomas Nuytten; Paul Van der Heide; John Petersen

doi:10.1117/12.2595048

22 February 2021 Lloyd’s mirror interference lithography below a 22-nm pitch with an accessible, tabletop, 13.5 nm high-harmonic EUV source

Kevin Dorney, Sonia Castellanos, Esben Larsen, Fabian Holzmeier, Dhirendra Singh, Nadia Vandenbroeck, Danilo De Simone, Peter De Schepper, Alessandro VaglioPret, Clayton Bargsten, Seth L. Cousin, Daisy Raymondson, Eric Rinard, Rod Ward, Henry Kaptyen, Thomas Nuytten, Paul Van der Heide, John Petersen

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Proceedings Volume 11610, Novel Patterning Technologies 2021; 1161011 (2021) https://doi.org/10.1117/12.2595048
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Recently, imec has installed and commissioned an industrial, ultrafast EUV materials characterization and lithography lab, imec’s AttoLab, with a primary aim to explore limits of photoresist performance and their associated ultrafast chemistries. Here, we demonstrate, for the first time, the use of a table-top, high-harmonic EUV system (KM Labs, XUUS4) to perform interference lithography of sub-22-nm pitch patterns in an Inpria MOx resist via a Lloyd’s mirror interference lithography (IL) tool. Analysis of SEM images enables us to identify potential sources of image blur, which we attribute to out-of-sync vibrations, flare, spectral purity, and laser stability. Nevertheless, these results confirm the ability of table-top, high-harmonic EUV sources to print lithographic patterns below a 22-nm pitch. In future work, we plan to investigate sub-20-nm patterning in different resist formulations, as well as expand the lithographic capabilities in AttoLab to perform IL on full 300-mm wafers.

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Kevin Dorney, Sonia Castellanos, Esben Larsen, Fabian Holzmeier, Dhirendra Singh, Nadia Vandenbroeck, Danilo De Simone, Peter De Schepper, Alessandro VaglioPret, Clayton Bargsten, Seth L. Cousin, Daisy Raymondson, Eric Rinard, Rod Ward, Henry Kaptyen, Thomas Nuytten, Paul Van der Heide, and John Petersen "Lloyd’s mirror interference lithography below a 22-nm pitch with an accessible, tabletop, 13.5 nm high-harmonic EUV source", Proc. SPIE 11610, Novel Patterning Technologies 2021, 1161011 (22 February 2021); https://doi.org/10.1117/12.2595048

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KEYWORDS

Lithography

Extreme ultraviolet

Mirrors

Extreme ultraviolet lithography

Photoresist materials

Ultrafast phenomena

Scanning electron microscopy

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