Reducing the absorbance of a high etch resistant spin-on carbon hardmask

Anton Chavez; Iou-Sheng Ke; Sabrina Wong; Curtis Williamson; Li Cui; Paul LaBeaume; Jim Cameron; Shintaro Yamada

doi:10.1117/12.2583630

22 February 2021 Reducing the absorbance of a high etch resistant spin-on carbon hardmask

Anton Chavez, Iou-Sheng Ke, Sabrina Wong, Curtis Williamson, Li Cui, Paul LaBeaume, Jim Cameron, Shintaro Yamada

Proceedings Volume 11612, Advances in Patterning Materials and Processes XXXVIII; 116120F (2021) https://doi.org/10.1117/12.2583630
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

The continued miniaturization of integrated circuit features has been made possible through multilayer patterning processes where different etch steps transfer the patterned photoresist image through various hardmasks and ultimately to the underlying substrate. Spin-on carbons (SOCs) are a type of a solution-dispensable carbon hardmask that can offer excellent resistance to various etch gases for good pattern transfer fidelity, while simultaneously conferring desirable gap fill and planarization properties onto the underlying substrate. We recently reported on the development of a new SOC platform with excellent etch resistance, having a relative reactive ion etch (RIE) rate of 1.08 compared to amorphous carbon. However, one drawback we observed for this polymer was its relatively high absorbance between 400-700 nm which can complicate lithographic alignment. Here we report our work on reducing the absorbance of our SOC platform while maintaining its excellent etch resistance. We identify that the origin of high absorbance is from side reactions that occur during curing and discuss the various polymer modifications or additives that prevent these unwanted processes. We additionally look at any trade-offs that are observed between decreasing absorbance and etch resistance and optimize the SOC’s composition to minimize absorbance while having a minimal effect on its etch resistance.

Conference Presentation

Citation Download Citation

Anton Chavez, Iou-Sheng Ke, Sabrina Wong, Curtis Williamson, Li Cui, Paul LaBeaume, Jim Cameron, and Shintaro Yamada "Reducing the absorbance of a high etch resistant spin-on carbon hardmask", Proc. SPIE 11612, Advances in Patterning Materials and Processes XXXVIII, 116120F (22 February 2021); https://doi.org/10.1117/12.2583630

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