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5 March 2021 High growth-rate MOCVD homoepitaxial β-Ga2O3 films and MOSFETs for power electronics applications
Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy Jr.
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870S (2021) https://doi.org/10.1117/12.2588944
Event: SPIE OPTO, 2021, Online Only
Abstract
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD (Agnitron Technology’s Agilis 100 reactor) with record high mobility of 170 cm2/Vs, despite increased carrier scattering rate in the doped channel, facilitated by a significant improvement in epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer. [1] M.J. Tadjer et al., J. Phys. D: Appl. Phys. 54 (2021) 034005.
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Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, and Charles Eddy Jr. "High growth-rate MOCVD homoepitaxial β-Ga2O3 films and MOSFETs for power electronics applications", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870S (5 March 2021); https://doi.org/10.1117/12.2588944
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KEYWORDS
Metalorganic chemical vapor deposition
Field effect transistors
Electronics
Atmospheric plasma
Scattering
Silicon carbide
Transistors
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